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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1294 DESCRIPTION *High Collector Current:: IC= -5A *Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -3A *Wide Area of Safe Operation *Complement to Type 2SD1897 APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE -100 -100 -5 -5 -10 UNIT V .cn mi e V V IC Collector Current-Continuous A ICM Collector Current-Peak Total Power Dissipation @ TC=25 A PC 30 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance CONDITIONS IC= -1mA; IB= 0 B 2SB1294 MIN -100 -100 -5 TYP. MAX UNIT V V V IC= -50A; IE= 0 IE= -50A; IC= 0 IC= -3A; IB= -0.3A B -1.0 -1.5 V V A A IC= -3A; IB= -0.3A B VCB= -100V; IE= 0 Current-Gain--Bandwidth Product hFE Classifications D 60-120 E 100-200 w w F 160-320 w. sem isc VEB= -4V; IC= 0 IC= -1A; VCE= -5V IE=0; VCB= -10V; f= 1MHz IE= 0.5A; VCE= -5V .cn i 60 -10 -10 320 120 12 pF MHz isc Websitewww.iscsemi.cn 2 |
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